CW OPERATION OF ALXGA1-XAS-ALYGA1-YAS LASERS GROWN BY METALORGANIC CVD IN WAVELENGTH RANGE 760 APPROXIMATELY 780 NM

被引:13
作者
MORI, Y
WATANABE, N
机构
关键词
D O I
10.1049/el:19800207
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:284 / 285
页数:2
相关论文
共 3 条
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BASS SJ, 1976, CONTROLLED DOPING GA, P1
[2]   ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
DUPUIS, RD ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1977, 31 (07) :466-468
[3]   GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].
DUPUIS, RD ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1977, 31 (12) :839-841