PHOTO-LUMINESCENCE AND LIFETIME STUDIES ON PLASMA DISCHARGE A-SI

被引：73

作者：

AUSTIN, IG ^{[1
]}

NASHASHIBI, TS ^{[1
]}

SEARLE, TM ^{[1
]}

LECOMBER, PG ^{[1
]}

SPEAR, WE ^{[1
]}

机构：

[1] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1979年 / 32卷 / 1-3期

关键词：

D O I：

10.1016/0022-3093(79)90083-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A detailed study has been made of the photoluminescence (PL) behaviour of high TD, undoped, glow-discharge a-Si, prepared by the Dundee group. Our measurements include temperature and field quenching of the luminescence and PL decay in the region 2 ns to ∼20 μs. Some recombination models for a-Si are briefly reviewed in the light of these results. Preliminary life-time data on doped a-Si are also presented and used to discuss our earlier measurements on the PL efficiency of doped samples. We conclude that a distribution of radiative lifetimes is present in a-Si, due to disorder. The main competitive non-radiative process is tunnelling to defects. © 1979.

引用

页码：373 / 391

页数：19

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