SPUTTER-DEPOSITION OF TANTALUM-NITRIDE FILMS ON COPPER USING AN RF-PLASMA

被引：5

作者：

WALTER, KC

FETHERSTON, RP

SRIDHARAN, K

CHEN, A

SHAMIM, MM

CONRAD, JR

机构：

[1] Madison, WI 53706

来源：

MATERIALS RESEARCH BULLETIN | 1994年 / 29卷 / 08期

关键词：

COATINGS; TANTALUM; NITRIDES;

D O I：

10.1016/0025-5408(94)90002-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A tantalum-nitride film was successfully deposited at ambient temperature on copper with a modified ion-assisted-deposition (IAD) technique. The process uses an argon and nitrogen plasma to sputter deposit from a tantalum rf-cathode and ion implant the deposited film simultaneously. Both argon and nitrogen ions are used for sputtering and ion implantation. Auger spectroscopy and x-ray diffraction were used to characterize the resulting film.

引用

页码：827 / 832

页数：6

共 10 条

[1] THE PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION OF TIC, TIN AND TICXN1-X [J].