PROPERTIES OF 1.0-MEV-ELECTRON-IRRADIATED DEFECT CENTERS IN SILICON

被引：127
作者：
WALKER, JW
SAH, CT
机构：
[1] UNIV ILLINOIS, DEPT ELECT ENGN, URBANA, IL 61801 USA
[2] UNIV ILLINOIS, DEPT PHYS, URBANA, IL 61801 USA
来源：
PHYSICAL REVIEW B | 1973年 / 7卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.7.4587
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4587 / 4605
页数：19
相关论文
共 66 条
[1]   ELECTRON PARAMAGNETIC RESONANCE AND ELECTRICAL PROPERTIES OF DOMINANT PARAMAGNETIC DEFECT IN ELECTRON-IRRADIATED P-TYPE SILICON [J].
ALMELEH, N ;
GOLDSTEIN, B .
PHYSICAL REVIEW, 1966, 149 (02) :687-+
[2]   ELECTRON-PARAMAGNETIC-RESONANCE DETECTION OF OPTICALLY INDUCED DIVACANCY ALIGNMENT IN SILICON [J].
AMMERLAAN, CA ;
WATKINS, GD .
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (10) :3988-+
[3]   RECOMBINATION AND TRAPPING IN NORMAL AND ELECTRON-IRRADIATED SILICON [J].
BAICKER, JA .
PHYSICAL REVIEW, 1963, 129 (03) :1174-&
[4]   PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J].
BEMSKI, G .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1195-1198
[5]   RECOMBINATION MECHANISMS [J].
BONCH-BRUEVICH, VL ;
LANDSBERG, EG .
PHYSICA STATUS SOLIDI, 1968, 29 (01) :9-+
[6]   IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE [J].
BUEHLER, MG .
SOLID-STATE ELECTRONICS, 1972, 15 (01) :69-+
[7]   EFFECT OF ELECTRON ENERGY ON DEFECT INTRODUCTION IN SILICON [J].
CARTER, JR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) :913-&
[8]   DEFECT-IMPURITY RELATIONSHIPS IN ELECTRON-DAMAGED SILICON [J].
CARTER, JR .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) :24-+
[9]   DEFECT CENTERS IN BORON-IMPLANTED SILICON [J].
CHAN, WW ;
SAH, CT .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :4768-&
[10]   1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J].
CHENG, LJ ;
CORELLI, JC ;
CORBETT, JW ;
WATKINS, GD .
PHYSICAL REVIEW, 1966, 152 (02) :761-+
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