HIGH-PERFORMANCE AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS

被引：34

|

作者：

MATSUMURA, M

NARA, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 12期

关键词：

D O I：

10.1063/1.327599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：6443 / 6444

页数：2

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