PIEZOCAPACITANCE MEASUREMENTS OF PHOSPHOROUS-DOPED AND ANTIMONY-DOPED SILICON - UNIAXIAL STRAIN-DEPENDENT DONOR POLARIZABILITIES

被引：20

作者：

TAN, HS ^{[1
]}

CASTNER, TG ^{[1
]}

机构：

[1] UNIV ROCHESTER, ROCHESTER, NY 14627 USA

来源：

关键词：

D O I：

10.1103/PhysRevB.23.3983

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3983 / 3999

页数：17

共 2 条

[1] UNIAXIAL STRAIN-DEPENDENT SHALLOW DONOR POLARIZABILITIES .2. A NEW MANY-VALLEY THEORETICAL FORMULATION
CASTNER, TG
TAN, HS
PHYSICAL REVIEW B, 1981, 23 (08): : 4000 - 4012
[2] High-frequency ESR measurements and ESR/NMR double resonance experiments of lightly phosphorous-doped silicon
Fujii, Y.
Mitsudo, S.
Morimoto, K.
Mizusaki, T.
Gwak, M.
Lee, S. G.
Fukuda, A.
Matsubara, A.
Ueno, T.
Lee, S.
27TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT27), PTS 1-5, 2014, 568