Fabrication of beta-Silicon Carbide Nanowires from Carbon Powder and Silicon Wafer

被引：0

作者：

Al-Ruqeishi, Majid S. ^{[1
]}

Mohiuddin, Tariq ^{[1
]}

机构：

[1] Sultan Qaboos Univ, Coll Sci, Dept Phys, POB 36,PC 123, Al Khoud, Oman

来源：

JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2016年 / 8卷 / 02期

关键词：

Carbo-thermal technique; SiC Nanowires; Nano-Optics;

D O I：

10.21272/jnep.8(2).02001

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

beta-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained beta-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While beta-SiCNWs fabricated under low heating rate are 57.0 +/- 3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant beta-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.

引用

页数：4

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