QUANTUM-MECHANICAL VERSUS SEMICLASSICAL CAPTURE AND TRANSPORT-PROPERTIES IN QUANTUM-WELL LASER STRUCTURES

被引:15
|
作者
DEVEAUD, B
MORRIS, D
REGRENY, A
BARROS, MRX
BECKER, P
GERARD, JM
机构
[1] CTR NATL ETUD TELECOMMUN,OCM LAB,FRANCE TELECOM,F-22301 LANNION,FRANCE
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
[3] CTR NATL ETUD TELECOMMUN,FRANCE TELECOM,PAB-PMM,F-92220 BAGNEUX,FRANCE
关键词
D O I
10.1007/BF00326655
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have studied experimentally and modelled theoretically the capture properties and transport mechanisms of electrons and holes in laser structures. We describe first the extreme case where the barrier thickness is very large: then semiclassical drift-diffusion equations may be applied and quantum-mechanical effects at the edge of the well are negligible. A second extreme case occurs when the barrier is narrow enough for quantum mechanics to apply fully. There, strong variations of the capture time with the well width are expected and observed. In real laser structures, dimensions are such that we are in an intermediate case and both aspects have to be taken into account. We give some typical values for diffusion/capture mechanism induced delay times in such a case.
引用
收藏
页码:S679 / S689
页数:11
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