ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXASYP1-Y ON GAAS

被引：25

作者：

IWAMOTO, T

MORI, K

MIZUTA, M

KUKIMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 03期

关键词：

D O I：

10.1143/JJAP.22.L191

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L191 / L193

页数：3

共 9 条

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[9] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP (X APPROXIMATELY 0.5) ON GAAS [J].

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