HETERO-EPITAXIAL GROWTH OF GE ON (111) SI BY VACUUM EVAPORATION

被引：19

作者：

GAROZZO, M

CONTE, G

EVANGELISTI, F

VITALI, G

机构：

[1] UNIV ROME, IST FIS G MARCONI, CNR, GRP NAZL STRUTTURA MAT, I-00100 ROME, ITALY

[2] UNIV ROME, FAC INGN, IST FIS, I-00100 ROME, ITALY

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 11期

关键词：

D O I：

10.1063/1.93404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1070 / 1072

页数：3

共 15 条

[1]

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[5]

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[7] EPITAXIAL GROWTH OF GE LAYERS ON SI SUBSTRATES BY VACUUM EVAPORATION [J].

ITO, K ;

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[8] Epitaxial Growth Behavior of Ge on Si {111} Surfaces [J].

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[9] EPITAXIAL DEPOSITION OF GERMANIUM BY BOTH SPUTTERING AND EVAPORATION [J].

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JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) :3665-+

[10] EPITAXIAL-GROWTH OF GE ON LESS-THAN-100 GREATER-THAN SI BY A SIMPLE CHEMICAL VAPOR-DEPOSITION TECHNIQUE [J].

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LAU, SS .

APPLIED PHYSICS LETTERS, 1981, 39 (03) :245-247

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