Q-FACTOR DEPENDENCE OF ONE-PORT ENCAPSULATED POLYSILICON RESONATOR ON REACTIVE SEALING PRESSURE

被引:13
作者
GUI, CQ [1 ]
LEGTENBERG, R [1 ]
ELWENSPOEK, M [1 ]
FLUITMAN, JH [1 ]
机构
[1] UNIV TWENTE,MESE RES INST,7500 AE ENSCHEDE,NETHERLANDS
关键词
D O I
10.1088/0960-1317/5/2/034
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Micromachined encapsulated polysilicon resonators have been fabricated in different reactive sealing pressure, 200, 50 and 20 mTorr, in order to investigate the dependence of the Q-factors on the sealing pressure. Q-factors as high as 2700 have been measured. The experimental results show that the Q-factors of one-port encapsulated resonators are proportional to 1/p and the resonant frequency is independent of the sealing pressure. However, the measured Q-factors are more than two orders of magnitude lower than theoretical prediction.
引用
收藏
页码:183 / 185
页数:3
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