A METHOD FOR THE MEASUREMENT OF THIN-FILM OPTICAL-CONSTANTS WITH A SPECTRAL PHOTOMETER FROM 230NM TO 850NM AND ITS APPLICATION TO PLASMA SILICON (OXY)NITRIDE

被引：7

作者：

BRENDEL, R

ZIEGLER, R

HEZEL, R

机构：

[1] Institut für Werkstoffwissenschaften VI, Universität Erlangen-Nürnberg, W-8520 Erlangen

来源：

THIN SOLID FILMS | 1991年 / 200卷 / 02期

关键词：

D O I：

10.1016/0040-6090(91)90194-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A technique to measure the complex index of refraction of thin solid films in the visible and near-UV range with a spectral photometer using polarized light is introduced. The complex index of refraction of amorphous silicon (oxy)nitride films deposited in a glow discharge with different gas flow ratios of NH3:SiH4 and N2O:SiH4 at 270-degrees-C was measured as a function of wavelength. The real part of the index of refraction at 632.8 nm of the films investigated varies from 1.5 to 2.5. The results could be confirmed by scanning ellipsometry.

引用

页码：219 / 228

页数：10

共 15 条

[1] INFLUENCE OF DEPOSITION TEMPERATURE, GAS-PRESSURE, GAS-PHASE COMPOSITION, AND RF FREQUENCY ON COMPOSITION AND MECHANICAL-STRESS OF PLASMA SILICON-NITRIDE LAYERS [J].