STUDY OF HYDROGEN INTERACTION WITH SIO2/SI(100) SYSTEM USING POSITRONS

被引：12
作者：
ASOKAKUMAR, P
LYNN, KG
LEUNG, TC
NIELSEN, B
WU, XY
机构：
[1] Department of Physics, Brookhaven National Laboratory, Upton
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 09期
关键词：
D O I：
10.1063/1.348872
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We describe positron annihilation studies of SiO2/Si(100) structures having 100-nm-thick oxide grown by plasma enhanced chemical vapor deposition. A normalized shape parameter is used to characterize the positron annihilation spectra. Activation and passivation of interface states by atomic hydrogen are demonstrated by repeated vacuum anneal and atomic hydrogen exposure. Hydrogen activation energy is derived for one of the samples as epsilon = 2.02 +/- 0.07 eV.
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收藏
页码：6603 / 6606
页数：4
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