共 50 条
- [1] ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC PHYSICAL REVIEW B, 1987, 35 (12): : 6154 - 6164
- [2] EL2 AND THE ELECTRONIC-STRUCTURE OF THE ASGA-ASI PAIR IN GAAS - THE ROLE OF LATTICE DISTORTION IN THE PROPERTIES OF THE NORMAL STATE PHYSICAL REVIEW B, 1988, 38 (09): : 6003 - 6014
- [4] STRUCTURE AND METASTABILITY OF THE EL2 DEFECT IN GAAS INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1995, 9 (11): : 1263 - 1312
- [5] OBSERVATION OF AN ADDITIONAL ELECTRONIC LEVEL OF THE EL2 DEFECT PHYSICAL REVIEW B, 1991, 44 (03): : 1372 - 1374
- [7] EL2 ELECTRET TRANSMITTER - ANALYTICAL MODELING, OPTIMIZATION, AND DESIGN BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (07): : 1557 - 1578