ON THE CHEMICAL SPUTTERING OF OXYGEN-EXPOSED MOLYBDENUM

被引:22
作者
SAIDOH, M [1 ]
GNASER, H [1 ]
HOFER, WO [1 ]
机构
[1] FORSCHUNGSZENTRUM JULICH, INST GRENZFLACHENFORSCH & VAKUUMPHYS, EURATOM ASSOC, D-5170 JULICH 1, FED REP GER
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 40卷 / 04期
关键词
D O I
10.1007/BF00616594
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:197 / 202
页数:6
相关论文
共 49 条
[31]   ION-ASSISTED ETCHING OF SILICON BY SF6 [J].
OOSTRA, DJ ;
HARING, A ;
DEVRIES, AE ;
SANDERS, FHM ;
MIYAKE, K .
APPLIED PHYSICS LETTERS, 1985, 46 (12) :1166-1168
[32]   ELECTRONIC EXCITATION OF TI ATOMS SPUTTERED BY ENERGETIC AR+ AND HE+ FROM CLEAN AND MONOLAYER OXYGEN COVERED SURFACES [J].
PELLIN, MJ ;
GRUEN, DM ;
YOUNG, CE ;
WIGGINS, MD .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :771-776
[33]   EMPIRICAL FORMULA FOR CALCULATION OF SECONDARY ION YIELDS FROM OXIDIZED METAL-SURFACES AND METAL-OXIDES [J].
PLOG, C ;
WIEDMANN, L ;
BENNINGHOVEN, A .
SURFACE SCIENCE, 1977, 67 (02) :565-580
[34]  
ROTH J, 1983, TOP APPL PHYS, V52, P91
[35]   EFFECTS OF OXYGEN AND NITROGEN ADSORPTION ON SECONDARY ION ENERGY-SPECTRA [J].
RUDAT, MA ;
MORRISON, GH .
INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1979, 30 (3-4) :233-250
[37]  
SAIDOH M, UNPUB
[38]  
SAIDOH M, 1986, NUCL INSTR METH B
[39]   SPUTTERING PROCESSES DURING 6 KEV XE ION-BEAM BOMBARDMENT OF HALIDES [J].
SZYMONSKI, M ;
OVEREIJNDER, H ;
DEVRIES, AE .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4) :189-196
[40]   CHEMICAL SPUTTERING OF FLUORINATED SILICON [J].
TU, YY ;
CHUANG, TJ ;
WINTERS, HF .
PHYSICAL REVIEW B, 1981, 23 (02) :823-835