RAMAN SCATTERING FROM DONOR AND ACCEPTOR IMPURITIES IN SILICON

被引：112

作者：

WRIGHT, GB

MOORADIA.A

机构：

来源：

PHYSICAL REVIEW LETTERS | 1967年 / 18卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.18.608

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：608 / &

共 15 条

[1]

AGGARWAL RL, 1965, PHYS REV, V140, P1246

[2] OPTICAL DETERMINATION OF THE VALLEY-ORBIT SPLITTING OF THE GROUND STATE OF DONORS IN SILICON [J].

AGGARWAL, RL .

SOLID STATE COMMUNICATIONS, 1964, 2 (06) :163-166

[3] ELECTRONIC RAMAN SPECTRUM OF CE3+/CAWO4 AT 77 DEGREES AND 2.2 DEGREES K [J].

CHAU, JYH .

JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (04) :1708-&

[4] RAMAN SCATTERING FROM CRYSTALS OF DIAMOND STRUCTURE [J].

COWLEY, RA .

JOURNAL DE PHYSIQUE, 1965, 26 (11) :659-&

[5]

DRESSELHAUS GF, PRIVATE COMMUNICATIO

[6] THE POSSIBLE OBSERVATION OF ELECTRONIC RAMAN TRANSITIONS IN CRYSTALS [J].

ELLIOTT, RJ ;

LOUDON, R .

PHYSICS LETTERS, 1963, 3 (04) :189-191

[7]

FISHER P, 1966, J PHYS SOC JPN, VS 21, P224

[8] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J].

HAYNES, JR .

PHYSICAL REVIEW LETTERS, 1960, 4 (07) :361-363

[9] ELECTRONIC RAMAN SCATTERING BY ACCEPTORS IN GAP [J].

HENRY, CH ;

HOPFIELD, JJ ;

LUTHER, LC .

PHYSICAL REVIEW LETTERS, 1966, 17 (23) :1178-&

[10] ELECTRONIC RAMAN EFFECT IN PR3+ IONS IN SINGLE CRYSTALS OF PRCL3 [J].

HOUGEN, JT ;

SINGH, S .

PHYSICAL REVIEW LETTERS, 1963, 10 (09) :406-&

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