RAPID ANNEALING AND CHARGE INJECTION IN AL2O3 MIS CAPACITORS

被引：26

作者：

MCLEAN, FB ^{[1
]}

BOESCH, HE ^{[1
]}

WINOKUR, PS ^{[1
]}

MCGARRITY, JM ^{[1
]}

OSWALD, RB ^{[1
]}

机构：

[1] HARRY DIAMOND LABS,WASHINGTON,DC 20438

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1974年 / NS21卷 / 06期

关键词：

D O I：

10.1109/TNS.1974.6498905

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：47 / 55

页数：9

共 20 条

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DAHLKE, WE .

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[7] INTERFACE STATES OF MOS DIODES WITH THIN SIO2 FILMS [J].

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ADACHI, Y .

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[8] FREQUENCY-RESPONSE OF SURFACE STATE ADMITTANCE IN WEAKLY INVERTED THIN SIO2-SI MOS CAPACITORS [J].

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SAH, CT .

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[9] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

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[10]

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