SWITCHING CHARACTERISTICS OF AMORPHOUS-SILICON FIELD-EFFECT-TRANSISTORS

被引：1
作者：
MATSUMURA, M
KAWASHIMA, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 06期
关键词：
D O I：
10.1143/JJAP.20.L414
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L414 / L416
页数：3
相关论文
共 7 条
[1]  
CARLSON DE, 1979, AMORPHOUS SEMICONDUC, P10
[2]   AMORPHOUS-SILICON THIN-FILM METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].
HAYAMA, H ;
MATSUMURA, M .
APPLIED PHYSICS LETTERS, 1980, 36 (09) :754-755
[3]  
Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X
[4]   AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J].
LECOMBER, PG ;
SPEAR, WE ;
GHAITH, A .
ELECTRONICS LETTERS, 1979, 15 (06) :179-181
[5]   AMORPHOUS-SILICON IMAGE SENSOR IC [J].
MATSUMURA, M ;
HAYAMA, H ;
NARA, Y ;
ISHIBASHI, K .
ELECTRON DEVICE LETTERS, 1980, 1 (09) :182-184
[6]   HIGH-PERFORMANCE AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS [J].
MATSUMURA, M ;
NARA, Y .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6443-6444
[7]   A NEW APPROACH TO THE INTERPRETATION OF TRANSPORT RESULTS IN A-SI [J].
SPEAR, WE ;
ALLAN, D ;
LECOMBER, P ;
GHAITH, A .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (04) :419-438
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