2-DIMENSIONAL SIMULATION OF GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：0
作者：
HOLDER, DJ
MILES, RE
SNOWDEN, CM
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1990年 / 112期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A two-dimensional model of a GaAs/AlGaAs Heterojunction Bipolar Transistor is used to investigate physical processes which have an impact on device performance. Recombination of electrons and holes at the emitter/base isolation implant and misalignment of alloy and doping boundaries are identified as causes of a significant reduction of current gain.
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页码：377 / 382
页数：6
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