PHOTO-LUMINESCENCE OF UNDOPED (100) INP HOMOEPITAXIAL FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引：14

作者：

KAWAMURA, Y

IKEDA, M

ASAHI, H

OKAMOTO, H

机构：

[1] Musashino Electrical Communication Laboratory, Nippon Telegraph, Telephone Public Corporation, Musashino-shi

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 07期

关键词：

D O I：

10.1063/1.91204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comparative study is given of the photoluminescence properties between undoped (100) InP homoepitaxial MBE and LPE films and bulk crystals. All of the samples show two peaks; one is a near band-edge emission at 1.41 eV with a small shoulder and the other is at about 1.13 eV. It is shown that the MBE films have a near band-edge emission with intensity comparable with the LPE films, and exhibit a smaller amount of deep-level emission than the LPE films and bulk crystals.

引用

页码：481 / 484

页数：4

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