MULTIPLE-WAVELENGTH DIODE-LASER SUPERARRAY

被引：4

作者：

EPLER, JE ^{[1
]}

TREAT, DW ^{[1
]}

NELSON, SE ^{[1
]}

PAOLI, TL ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1990年 / 26卷 / 04期

关键词：

D O I：

10.1109/3.53382

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic array of four diode laser arrays operating at four widely separated wavelengths over a 30 nm bandwidth is demonstrated. The multiple-wavelength SuperArray is fabricated from GaAs/AlGaAs separate confinement laser material in which the thickness of the single quantum well active layer is laterally graded to control its effective bandgap. Lateral thickness control is achieved by using laser-induced desorption to selectively thin the epitaxial layer during the MOCVD growth cycle. Transmission electron microscopy is used to demonstrate the variation of the quantum well thickness from approximately 8 to 13 nm across the 1 mm long chip as a result of the desorption. Individually addressable subarrays containing ten gain-guided emitters are defined after growth by conventional proton bombardment and localized metallization. Optical performance characteristics of the SuperArray are presented and discussed. We believe this device is the first laser to be made from material selectively modified during epitaxial growth. © 1990 IEEE

引用

页码：663 / 668

页数：6

共 19 条

[11] SIMULTANEOUS CW OPERATION OF 5-WAVELENGTH INTEGRATED GAINASP-INP DFB LASER ARRAY WITH 50-A LASING WAVELENGTH SEPARATION [J].