DEFECTS IN SILICON PRE-AMORPHISED BY GERMANIUM IMPLANTATION AFTER RAPID THERMAL ANNEALING INVESTIGATED BY TRANSMISSION ELECTRON-MICROSCOPY

被引：0
作者：
MEEKISON, CD
GOLD, DP
BOOKER, GR
HILL, C
BOYS, DR
机构：
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1989 | 1989年 / 100卷
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T [工业技术];
学科分类号：
08 ;
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页码：507 / 512
页数：6
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