共 43 条
- [11] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF DEFECTS IN ANNEALED SILICON SINGLE-CRYSTALS ALLOYED BY GERMANIUM IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1988, 52 (07): : 1284 - 1287
- [13] INTERACTION BETWEEN VACANCY EMITTING-ABSORBING PRECIPITATES AND DISLOCATIONS IN SILICON AS INVESTIGATED BY TRANSMISSION ELECTRON-MICROSCOPY PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 37 (04): : 465 - 478
- [16] STRUCTURE OF SILICON AFTER B+ AND P+ IMPLANTATION AND RAPID THERMAL ANNEALING PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 107 (02): : K105 - &
- [18] 200 eV 10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (01): : 327 - 333