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- [6] CRYSTALLIZATION OF AMORPHOUS-SILICON CARBONITRIDE INVESTIGATED BY TRANSMISSION ELECTRON-MICROSCOPY (TEM) SILICON NITRIDE 93, 1994, 89-9 : 95 - 99
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- [9] HEATPULSE ANNEALING OF ION-IMPLANTED SILICON - STRUCTURAL CHARACTERIZATION BY TRANSMISSION ELECTRON-MICROSCOPY INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (67): : 143 - 148
- [10] ANALYSIS OF ROD-LIKE DEFECTS IN SILICON AND GERMANIUM BY MEANS OF HIGH-RESOLUTION ELECTRON-MICROSCOPY PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 80 (01): : 135 - 139