DISLOCATION ENERGY-LEVELS IN GE

被引：6

作者：

CAVALLINI, A ^{[1
]}

GONDI, P ^{[1
]}

CASTALDINI, A ^{[1
]}

机构：

[1] UNIV BOLOGNA,IST FIS,CNR,GRP NAZL STRUCT MAT UNITA,I-40126 BOLOGNA,ITALY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 43卷 / 02期

关键词：

D O I：

10.1002/pssa.2210430265

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K205 / K208

页数：4

共 9 条

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CAVALLINI, A
GONDI, P
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[2] DISSOCIATED DISLOCATIONS IN GE AFTER DEFORMATION AT RELATIVELY LOW-TEMPERATURES
CAVALLINI, A
GONDI, P
[J]. LETTERE AL NUOVO CIMENTO, 1975, 14 (06): : 222 - 224
[3] INTRODUCTION OF DISLOCATIONS OF DIFFERENT CHARACTER DEPENDING ON DEFORMATION TEMPERATURE IN GE
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GONDI, P
SCHINTU, F
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 27 (02): : 523 - 531
[4] Grazhulis V. A., 1971, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V60, P1150
[5] Grazhulis V. A., 1970, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V58, P1259
[6] ELECTRONIC STATES AT DISLOCATIONS IN GERMANIUM
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SCHETTLER, R
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 9 (02): : 455 - +
[7] READ WT, 1954, PHILOS MAG, V45, P775
[8] ELECTRICAL PROPERTIES OF DISLOCATIONS IN GE AND SI
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LABUSCH, R
[J]. PHYSICA STATUS SOLIDI, 1969, 36 (02): : 539 - &
[9] ANNEALING OF EPR-SIGNAL PRODUCED IN SILICON BY PLASTIC DEFORMATION
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ALEXANDER, H
SANDER, W
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (06) : 1381 - +