MECHANISM OF DIFFUSION OF COPPER IN GERMANIUM

被引:534
作者
FRANK, FC
TURNBULL, D
机构
来源
PHYSICAL REVIEW | 1956年 / 104卷 / 03期
关键词
D O I
10.1103/PhysRev.104.617
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:617 / 618
页数:2
相关论文
共 7 条
[1]   COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].
DASH, WC .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) :1193-1195
[2]  
FULLER, 1954, PHYS REV, V93, P1182
[3]  
LETAW, 1954, PHYS REV, V93, P892
[4]   MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON [J].
SEVERIENS, JC ;
FULLER, CS .
PHYSICAL REVIEW, 1953, 92 (05) :1322-1323
[5]   STRUCTURE SENSITIVITY OF CU DIFFUSION IN GE [J].
TWEET, AG ;
GALLAGHER, CJ .
PHYSICAL REVIEW, 1956, 103 (03) :828-828
[6]  
TWEET AG, COMMUNICATION
[7]   ON THE BEHAVIOR OF RAPIDLY DIFFUSING ACCEPTORS IN GERMANIUM [J].
VANDERMAESEN, F ;
BRENKMAN, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1955, 102 (05) :229-234