TETRAHYDROPYRANYL PROTECTED POLYHYDROXYSTYRENE FOR A CHEMICALLY AMPLIFIED DEEP UV RESIST

被引：14

作者：

HAYASHI, N ^{[1
]}

UENO, T ^{[1
]}

HESP, S ^{[1
]}

TORIUMI, M ^{[1
]}

IWAYANAGI, T ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

POLYMER | 1992年 / 33卷 / 08期

关键词：

TETRAHYDROPYRANYL PROTECTED POLYHYDROXYSTYRENE; ONIUM SALT; ACID-CATALYZED DEPROTECTION; CHEMICAL AMPLIFICATION; DEEP UV RESIST;

D O I：

10.1016/0032-3861(92)91053-5

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Tetrahydropyranyl (THP) protected poly(p-hydroxystyrene) (PHS) was synthesized and its acid-catalysed thermal deprotection utilized in the design of an alkali developable, positive photoresist system incorporating chemical amplification. The solubility of THP-PHS films mixed with the appropriate onium salt photo acid generators in alkaline developers increases upon exposure to deep u.v. radiation and subsequent heating. A resist composed of THP-PHS and bis(tert-butylphenyl)iodonium triflate resolves 0.35-mu-m line-and-space patterns using a KrF excimer laser (248 nm) stepper (20 mJ cm-2).

引用

页码：1583 / 1588

页数：6

共 14 条

[1]

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[2]

CRIVELLO JV, 1978, J ORG CHEM, V43, P305

[3]

FRECHET JMJ, 1989, ACS SYM SER, V381, P155

[4] POLY(PARA-TERT-BUTOXYCARBONYLOXYSTYRENE) - A CONVENIENT PRECURSOR TO PARA-HYDROXYSTYRENE RESINS [J].