NATURE OF ANOMALOUS MAGNETIC RELUCTANCE IN HEAVILY DOPED P-TYPE GERMANIUM

被引：0
作者：
IONOV, AN
机构：
来源：
JETP LETTERS | 1979年 / 29卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：70 / 72
页数：3
相关论文
共 50 条
[21]   RADIATIVE RECOMBINATION IN HEAVILY DOPED P-TYPE GAAS [J].
SUSHKOV, VP ;
MOMA, YA .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (10) :1273-&
[22]   AUGER RECOMBINATION IN HEAVILY DOPED P-TYPE GAAS [J].
ZSCHAUER, KH .
SOLID STATE COMMUNICATIONS, 1969, 7 (23) :1709-&
[23]   PHONON ATTENUATION IN HEAVILY DOPED P-TYPE SEMICONDUCTORS [J].
SOTA, T ;
SUZUKI, K .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (15) :2661-2680
[24]   CONDUCTION BREAKDOWN IN LIGHTLY DOPED P-TYPE GERMANIUM [J].
ZITTER, RN ;
ZHANG, XS .
PHYSICAL REVIEW B, 1992, 46 (07) :3830-3833
[25]   HEAVILY CARBON-DOPED P-TYPE INGAAS BY MOMBE [J].
TOKUMITSU, E ;
SHIRAKASHI, J ;
QI, M ;
YAMADA, T ;
NOZAKI, S ;
KONAGAI, M ;
TAKAHASHI, K .
JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) :301-305
[26]   Piezoresistive Properties of Heavily Doped P-type Polysilicon Films [J].
Lu, Xuebin ;
Liu, Xiaowei ;
Chuai, Rongyan ;
Shi, Changzhi ;
Huo, Mingxue ;
Chen, Weiping .
2009 4TH IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1 AND 2, 2009, :498-+
[27]   ELECTRICAL-CONDUCTIVITY OF HEAVILY DOPED P-TYPE DIAMOND [J].
VISHNEVSKII, AS ;
GONTAR, AG ;
TORISHNII, VI ;
SHULZHENKO, AA .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (06) :659-661
[28]   RECTIFICATION IN HEAVILY DOPED P-TYPE GAAS/ALAS HETEROJUNCTIONS [J].
YOFFE, GW .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (02) :1081-1083
[29]   INFRARED REFLECTION OF HEAVILY DOPED P-TYPE GALLIUM ARSENIDE [J].
RICCIUS, HD ;
BERTIE, JE .
CANADIAN JOURNAL OF PHYSICS, 1966, 44 (07) :1665-&
[30]   RADIATIVE RECOMBINATION IN LIGHTLY AND HEAVILY DOPED P-TYPE GAAS [J].
NASLEDOV, DN ;
NEGRESKU.VV ;
TSARENKO.BV .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (08) :1012-+
12345