A SENSITIVE AND INEXPENSIVE SIGNAL ANALYZER FOR DEEP LEVEL STUDIES

被引:31
作者
JANSSON, L
KUMAR, V
LEDEBO, LA
NIDEBORN, K
机构
来源
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 1981年 / 14卷 / 04期
关键词
D O I
10.1088/0022-3735/14/4/018
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:464 / 467
页数:4
相关论文
共 14 条
[1]   DEEP-LEVEL-TRANSIENT SPECTROSCOPY - SYSTEM EFFECTS AND DATA-ANALYSIS [J].
DAY, DS ;
TSAI, MY ;
STREETMAN, BG ;
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5093-5098
[2]   ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON AS DETERMINED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].
EVWARAYE, AO ;
SUN, E .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3172-3176
[3]  
FERENCZI G, UNPUBLISHED
[4]  
FORBES L, 1979, HEWLETT-PACKARD J, V30, P29
[5]   DEEP LEVEL IMPURITIES IN SEMICONDUCTORS [J].
GRIMMEISS, HG .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :341-376
[6]   SIMPLE SIGNAL ANALYZER FOR DEEP-LEVEL TRAP SPECTROSCOPY [J].
GULDBERG, J .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (10) :1016-1018
[7]   NEW DEVELOPMENTS IN DEFECT STUDIES IN SEMICONDUCTORS [J].
KIMERLING, LC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1497-1505
[8]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[9]   FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022
[10]   DOUBLE CORRELATION TECHNIQUE (DDLTS) FOR ANALYSIS OF DEEP LEVEL PROFILES IN SEMICONDUCTORS [J].
LEFEVRE, H ;
SCHULZ, M .
APPLIED PHYSICS, 1977, 12 (01) :45-53