ON THEORY OF SURFACE STATES OF ELECTRONS IN SEMICONDUCTORS

被引：15
作者：
BARTOS, I
机构：
[1] Institute of Solid State Physics, Czechoslovak Academy of Sciences, Prague
来源：
SURFACE SCIENCE | 1969年 / 15卷 / 01期
关键词：
D O I：
10.1016/0039-6028(69)90067-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Extension of the full zone kp-method to calculations of surface states of electrons is formulated and its approximations are critically discussed on (100)-surfaces of Ge and Si. © 1969.
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页码：94 / &
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