THEORY OF IMPURITY-INDUCED INFRARED-ABSORPTION IN INVERSION-LAYERS

被引:5
作者
VINTER, B
机构
关键词
D O I
10.1016/0039-6028(82)90575-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:140 / 143
页数:4
相关论文
共 8 条
[1]  
CHANG HR, UNPUB COMMUNICATION
[2]   TEMPERATURE-DEPENDENCE OF SCATTERING IN THE INVERSION LAYER [J].
HARTSTEIN, A ;
FOWLER, AB ;
ALBERT, M .
SURFACE SCIENCE, 1980, 98 (1-3) :181-190
[3]  
KRAMER GM, 1979, I PHYS C SER, V43, P1243
[4]   THEORY OF BOUND-STATES ASSOCIATED WITH N-TYPE INVERSION LAYERS ON SILICON [J].
MARTIN, BG ;
WALLIS, RF .
PHYSICAL REVIEW B, 1978, 18 (10) :5644-5648
[5]   INTERSUBBAND SPECTROSCOPY OF INVERSION-LAYERS IN THE PRINCIPAL SURFACES OF SILICON - MANY-BODY AND IMPURITY EFFECTS [J].
MCCOMBE, BD ;
COLE, T .
SURFACE SCIENCE, 1980, 98 (1-3) :469-480
[6]  
MCCOMBE BD, 1979, I PHYS C SERIES, V43, P1227
[7]   IMPURITY SCATTERING IN INVERSION-LAYERS IN DENSITY FUNCTIONAL FORMALISMS [J].
VINTER, B .
SURFACE SCIENCE, 1980, 98 (1-3) :197-201
[8]   SELF-CONSISTENT CALCULATION OF IMPURITY SCATTERING IN INVERSION LAYERS [J].
VINTER, B .
SOLID STATE COMMUNICATIONS, 1978, 28 (10) :861-863