THEORY OF LOCALIZED STATES IN SEMICONDUCTORS .1. NEW RESULTS USING AN OLD METHOD

被引:188
作者
PANTELIDES, ST
SAH, CT
机构
[1] UNIV ILLINOIS, DEPT PHYS, URBANA, IL 61801 USA
[2] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA
关键词
D O I
10.1103/PhysRevB.10.621
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:621 / 637
页数:17
相关论文
共 56 条
[1]  
AGGARWAL RL, 1965, PHYS REV, V140, P1246
[3]   EFFECT OF SPIN-ORBIT COUPLING + OTHER RELATIVISTIC CORRECTIONS ON DONOR STATES IN GE + SI [J].
APPEL, J .
PHYSICAL REVIEW, 1964, 133 (1A) :A280-A287
[4]   VALLEY-ORBIT INTERACTION IN SEMICONDUCTORS [J].
BALDERESCHI, A .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (12) :4673-+
[5]   NEW METHOD FOR TREATING LATTICE POINT DEFECTS IN COVALENT CRYSTALS [J].
BENNEMAN, KH .
PHYSICAL REVIEW, 1965, 137 (5A) :1497-+
[6]   ON EFFECTIVE MASS APPROXIMATION [J].
BREITENECKER, M ;
SEXL, R ;
THIRRING, W .
ZEITSCHRIFT FUR PHYSIK, 1964, 182 (02) :123-+
[7]   MODEL CALCULATION OF Q-DEPENDENT DIELECTRIC FUNCTION OF SOME ZINC-BLENDE SEMICONDUCTORS [J].
BRUST, D .
PHYSICAL REVIEW B, 1972, 5 (02) :435-+
[8]   LOCALIZED DEFECTS IN SEMICONDUCTORS [J].
CALLAWAY, J ;
HUGHES, AJ .
PHYSICAL REVIEW, 1967, 156 (03) :860-+
[9]   INFLUENCE OF HYDROSTATIC PRESSURE AND TEMPERATURE ON DEEP DONOR LEVELS OF SULFUR IN SILICON [J].
CAMPHAUSEN, DL ;
JAMES, HM ;
SLADEK, RJ .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06) :1899-+
[10]  
CORBETT JW, 1966, SOLID STATE PHYS S, V7, P155