GUIDING MECHANISMS CONTROLLED BY IMPURITY CONCENTRATIONS-(AL,GA)AS PLANAR STRIPE LASERS WITH DEEP ZN DIFFUSION

被引：14
作者：
UENO, M
YONEZU, H
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 05期
关键词：
D O I：
10.1063/1.328006
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2361 / 2371
页数：11
相关论文
共 28 条
[1]   TRANSVERSE MODE STABILIZED ALX GA1-XAS INJECTION-LASERS WITH CHANNELED-SUBSTRATE-PLANAR STRUCTURE [J].
AIKI, K ;
NAKAMURA, M ;
KURODA, T ;
UMEDA, J ;
ITO, R ;
CHINONE, N ;
MAEDA, M .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) :89-94
[2]   CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].
CASEY, HC ;
SELL, DD ;
WECHT, KW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257
[3]   REFRACTIVE-INDEX OF ALXGA1-X AS BETWEEN 1.2 AND 1.8 EV [J].
CASEY, HC ;
SELL, DD ;
PANISH, MB .
APPLIED PHYSICS LETTERS, 1974, 24 (02) :63-65
[4]  
CASEY HC, 1978, J APPL PHYS, V49, P3684, DOI 10.1063/1.325421
[5]   ELECTROLUMINESCENT SHIFTING-PEAK SPECTRA IN GAAS WITH UNIFORM EXCITATION [J].
CASEY, HC ;
BACHRACH, RZ .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2795-2804
[6]  
Casey Jr H. C., 1978, HETEROSTRUCTURE LA A
[7]   GAIN-INDUCED GUIDING AND ASTIGMATIC OUTPUT BEAM OF GAAS LASERS [J].
COOK, DD ;
NASH, FR .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1660-1672
[8]   RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J].
CUSANO, DA .
SOLID STATE COMMUNICATIONS, 1964, 2 (11) :353-358
[9]   EFFECT OF DEVICE GEOMETRY ON LATERAL-MODE CONTENT OF STRIPE GEOMETRY LASERS [J].
DELANEY, JB ;
BUTLER, JK .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :750-755
[10]  
GROVE AS, 1967, PHYS TECHNOL S, pCH3
123