ACCOMMODATION OF MISFIT ACROSS INTERFACE TEBWEEN CRYSTALS OF SEMICONDUCTING ELEMENTS OR COMPOUNDS

被引：540

作者：

MATTHEWS, JW

MADER, S

LIGHT, TB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 09期

关键词：

D O I：

10.1063/1.1659510

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3800 / &

共 47 条

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J].

ABRAHAMS, MS ;

WEISBERG, LR ;

BUIOCCHI, CJ ;

BLANC, J .

JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) :223-&

[2]

ABRAHAMS MS, 1969, J APPL PHYS, V46, P3754

[3]

Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4

[4] EPITAXIAL GROWTH OF MIRROR SMOOTH GE ON GAAS AND GE BY LOW TEMPERATURE GEL2 DISPROPORTIONATION REACTION [J].

BERKENBL.M ;

REISMAN, A ;

LIGHT, TB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) :966-&

[5] EPITAXIALLY INDUCED STRAINS IN CU2O FILMS ON COPPER SINGLE CRYSTALS .1. X-RAY DIFFRACTION EFFECTS [J].

BORIE, B ;

SPARKS, CJ ;

CATHCART, JV .

ACTA METALLURGICA, 1962, 10 (AUG) :691-&

[6]

CABRERA N, 1965, MEM ETUD SCI REV MET, V62, P205

[7] THEORY OF DISLOCATION MOBILITY IN SEMICONDUCTORS [J].

CELLI, V ;

THOMSON, R ;

KABLER, M ;

NINOMIYA, T .

PHYSICAL REVIEW, 1963, 131 (01) :58-&

[8] SCREW DISLOCATION IN CRYSTALS WITH DIAMOND STRUCTURE [J].

CELLI, V .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (1-2) :100-104

[9] VELOCITIES AND DENSITIES OF DISLOCATIONS IN GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS [J].

CHAUDHURI, AR ;

PATEL, JR ;

RUBIN, LG .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) :2736-&

[10] PRECISION THERMAL EXPANSION MEASUREMENTS OF SEMI-INSULATING GAAS [J].

FEDER, R ;

LIGHT, T .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4870-&

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