FARADAY EFFECT IN NON-DEGENERATE SEMICONDUCTORS

被引：27
作者：
DONOVAN, B
WEBSTER, J
机构：
来源：
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1961年 / 78卷 / 503期
关键词：
D O I：
10.1088/0370-1328/78/1/317
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：120 / &
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