DEFORMATION POTENTIALS OF THE FUNDAMENTAL EXCITON SPECTRUM OF INP

被引：23

作者：

CAMASSEL, J

MERLE, P

BAYO, L

MATHIEU, H

机构：

来源：

PHYSICAL REVIEW B | 1980年 / 22卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.22.2020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2020 / 2024

页数：5

共 16 条

[1] ELECTROREFLECTANCE AND BAND-STRUCTURE OF GAXIN1-XP ALLOYS [J].

ALIBERT, C ;

CHEVALLI.J ;

BORDURE, G ;

LAUGIER, A .

PHYSICAL REVIEW B, 1972, 6 (04) :1301-&

[2]

BATZ B, 1972, SEMICONDUCT SEMIMET, V9, P316

[3]

BENDORYU.RA, 1972, SOV PHYS SEMICOND+, V6, P1042

[4] TEMPERATURE-DEPENDENCE OF BAND-GAP AND COMPARISON WITH THRESHOLD FREQUENCY OF PURE GAAS LASERS [J].

CAMASSEL, J ;

AUVERGNE, D ;

MATHIEU, H .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2683-2689

[5] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].

CARDONA, M ;

SHAKLEE, KL ;

POLLAK, FH .

PHYSICAL REVIEW, 1967, 154 (03) :696-+

[6] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS [J].

CHANDRASEKHAR, M ;

POLLAK, FH .

PHYSICAL REVIEW B, 1977, 15 (04) :2127-2144

[7] DEPENDENCE OF EXCITON REFLECTANCE ON FIELD AND OTHER SURFACE CHARACTERISTICS - CASE OF INP [J].

EVANGELI.F ;

FISCHBAC.JU ;

FROVA, A .

PHYSICAL REVIEW B, 1974, 9 (04) :1516-1524

[8]

FISHBACK JV, 1972, SOLID STATE COMMUN, V11, P721

[9] ELASTIC CONSTANTS OF SINGLE-CRYSTAL INDIUM PHOSPHIDE [J].

HICKERNELL, FS ;

GAYTON, WR .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :462-+

[10] DEFORMATION POTENTIALS OF THE DIRECT AND INDIRECT ABSORPTION EDGES OF GAP [J].

MATHIEU, H ;

MERLE, P ;

AMEZIANE, EL ;

ARCHILLA, B ;

CAMASSEL, J ;

POIBLAUD, G .

PHYSICAL REVIEW B, 1979, 19 (04) :2209-2223

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