STUDY OF THE (7X7)[--](1X1) SI(111) SURFACE TRANSITION BY SPECTROSCOPIC ELLIPSOMETRY NEAR THE PSEUDO-BREWSTER ANGLE

被引:2
|
作者
MULLER, P
GAUCH, M
QUENTEL, G
机构
[1] Centre de Recherches sur les Mécanismes, la Croissance Cristalline 1 1 Laboratoire associé aux Universités d'Aix-Marseille II, III., F-13288 Marseille Cedex 9, Campus de Luminy
关键词
D O I
10.1016/0039-6028(94)90053-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this paper we study the (7 x 7) <-> (1 x 1) Si(111) surface transition by using spectroscopic ellipsometry near the pseudo-Brewster (PB) angle. At PB energy, tg psi (respectively cos DELTA) increases (decreases) linearly with different slopes according to T < T(c) or T > T(c). These two different slopes correspond to the two different (7 x 7) and (1 x 1) superstructures. Around T(c), psi deviates from linearity. This effect is attributed to an electrostatic interaction between (7 x 7) and (1 x 1) domains.
引用
收藏
页码:335 / 340
页数:6
相关论文
共 50 条
  • [31] ANGLE-RESOLVED PHOTOEMISSION-STUDIES OF GE(111)-C(2X8),GE(111)-(1X1)H,SI(111)-(7X7), AND SI(100)-(2X1)
    WACHS, AL
    MILLER, T
    HSIEH, TC
    SHAPIRO, AP
    CHIANG, TC
    PHYSICAL REVIEW B, 1985, 32 (04): : 2326 - 2333
  • [32] STRUCTURAL STUDY OF SI GROWTH ON A SI(111) 7X7 SURFACE
    NAKAHARA, H
    ICHIMIYA, A
    SURFACE SCIENCE, 1991, 241 (1-2) : 124 - 134
  • [33] EXPERIMENTAL RESULTS FROM SPECTROSCOPIC ELLIPSOMETRY ON THE (7X7)SI(111) SURFACE RECONSTRUCTION - DIELECTRIC FUNCTION DETERMINATION
    HAMMADI, Z
    GAUCH, M
    MULLER, P
    QUENTEL, G
    SURFACE SCIENCE, 1995, 341 (1-2) : 202 - 212
  • [34] ON THE PHASE-TRANSITION BETWEEN THE (7X7) AND (1X1) STRUCTURES OF SILICON(111) SURFACE STUDIED BY REFLECTION ELECTRON-MICROSCOPY
    TANISHIRO, Y
    TAKAYANAGI, K
    YAGI, K
    ULTRAMICROSCOPY, 1983, 11 (2-3) : 95 - 102
  • [35] Metal-insulator transition in the Si(111)-(7x7) surface
    Flores, F
    Yeyati, AL
    Ortega, J
    SURFACE REVIEW AND LETTERS, 1997, 4 (02) : 281 - 286
  • [36] STUDY OF NIOBIUM INTERACTION WITH THE SI(111)7X7 SURFACE
    OUSTRY, A
    BERTY, J
    CAUMONT, M
    DAVID, MJ
    JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES, 1989, 14 (06): : 427 - 436
  • [37] X-RAY REFLECTIVITY STUDY OF THE SI(111)7X7 SURFACE
    ROBINSON, IK
    VLIEG, E
    SURFACE SCIENCE, 1992, 261 (1-3) : 123 - 128
  • [38] 1ST OBSERVATION OF THE SI(111)-7X7[--]1X1 PHASE-TRANSITION BY THE OPTICAL 2ND-HARMONIC GENERATION
    SUZUKI, T
    HIRABAYASHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (4B): : L610 - L613
  • [39] Laser-induced electronic instability on semiconductor surfaces of Si (111)-(7x7) and InP (110)-(1x1)
    Tanimura, K
    Kanasaki, J
    Ishikawa, K
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 325 - 326
  • [40] SURFACE RECONSTRUCTIONS AND THEIR TRANSITIONS - A THERMODYNAMIC THEORY APPLIED TO THE (2X1)-(7X7) TRANSITION OF THE (111) SI SURFACE
    SPARNAAY, MJ
    SURFACE SCIENCE, 1981, 110 (01) : 179 - 188