GROWTH OF TUNGSTEN FILM BY FOCUSED ION-BEAM INDUCED DEPOSITION

被引：7
|
作者：
TAKAHASHI, Y
MADOKORO, Y
ISHITANI, T
机构：
[1] Central Research Laboratory, Hitachi Ltd, Kokubunji, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 3B期
关键词：
FOCUSED-ION-BEAM INDUCED DEPOSITION; HEXACARBONYL TUNGSTEN; GROWTH OF TUNGSTEN; ISLAND STRUCTURE; COALESCENCE; RESISTIVITY;
D O I：
10.1143/JJAP.30.L518
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Growth of tungsten film by focused-ion-beam (FIB) induced deposition is studied using scanning electron microscope. A 30 kV Ga+ beam with a current density of 14 mA/cm2 is used to deposit a tungsten film on a SiO2 substrate in a tungsten hexacarbonyl (W(CO)6) gas environment. These resistivity of the film shows a sharp decrease around a dose of 0.6 x 10(17) cm-2, and the resistivity becomes almost constant (at about 120-mu-OMEGA . cm) at a larger dose. The film has island structures during the early stages of deposition. The sharp decrease in its resistivity corresponds to coalescence of the islands.
引用
收藏
页码：L518 / L520
页数：3
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