X-RAY-DIFFRACTION STUDY OF THE AMORPHOUS STRUCTURE OF CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE

被引：103
作者：
AIYAMA, T
FUKUNAGA, T
NIIHARA, K
HIRAI, T
SUZUKI, K
机构：
[1] The Research Institute for Iron, Steel and Other Metals, Tohoku University, Sendai
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1979年 / 33卷 / 02期
关键词：
D O I：
10.1016/0022-3093(79)90043-7
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
X-ray diffraction measurements have been carried out for two kinds of samples of CVD-amorphous silicon nitride with different values of the density. From radial distribution analysis, it became clear that the short range structure in these samples resembles that of the crystalline β-phase. Coloring in CVD-amorphous Si3N4 was found to be induced by X-ray irradiation. Based on the deficient numbers of the first nearest neighbours in SiN bondings, it was proposed that CVD-amorphous Si3N4 consists of small clusters including vacancies in their matrix. © 1979.
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页码：131 / 139
页数：9
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