HIGH-CONCENTRATION ARSENIC DIFFUSION IN SILICON FROM A DOPED OXIDE SOURCE

[1] ABE T, 1970, JAPAN J APPL PHYS S, V39, P88

[2] ABE T, 1969, 1 P C SOL STAT DEV T

[3] ADAMS RV, 1961, PHYS CHEM GLASSES-B, V2, P101

[4] STRUCTUAL CHANGES OF ARSENIC SILICATE GLASSES WITH HEAT TREATMENTS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (06) : 691 - +

[5] DOPED OXIDES AS DIFFUSION SOURCES .I. BORON INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 854 - &

[6] GLASS SOURCE B DIFFUSION IN SI AND SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 293 - +

[7] CUCCIA A, 1969, MAY M SOC NEW YORK

[8] SILICON DEFECT STRUCTURE INDUCED BY ARSENIC DIFFUSION AND SUBSEQUENT STEAM OXIDATION [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (04) : 453 - &

[9] Elliot J.F., 1960, THERMOCHEMISTRY STEE

[10] PROFILE ESTIMATION OF HIGH-CONCENTRATION ARSENIC DIFFUSIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1278 - &

[1] ABE T, 1970, JAPAN J APPL PHYS S, V39, P88

[2] ABE T, 1969, 1 P C SOL STAT DEV T

[3] ADAMS RV, 1961, PHYS CHEM GLASSES-B, V2, P101

[4] STRUCTUAL CHANGES OF ARSENIC SILICATE GLASSES WITH HEAT TREATMENTS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (06) : 691 - +

[5] DOPED OXIDES AS DIFFUSION SOURCES .I. BORON INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 854 - &

[6] GLASS SOURCE B DIFFUSION IN SI AND SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 293 - +

[7] CUCCIA A, 1969, MAY M SOC NEW YORK

[8] SILICON DEFECT STRUCTURE INDUCED BY ARSENIC DIFFUSION AND SUBSEQUENT STEAM OXIDATION [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (04) : 453 - &

[9] Elliot J.F., 1960, THERMOCHEMISTRY STEE

[10] PROFILE ESTIMATION OF HIGH-CONCENTRATION ARSENIC DIFFUSIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1278 - &