STRAIN ADJUSTMENT IN ULTRA THIN SI/GE SUPERLATTICES

被引：19

作者：

KASPER, E

KIBBEL, H

PRESTING, H

机构：

来源：

THIN SOLID FILMS | 1989年 / 183卷

关键词：

D O I：

10.1016/0040-6090(89)90433-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：87 / 93

页数：7

共 10 条

[1] THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE [J].

GNUTZMAN.U ;

CLAUSECK.K .

APPLIED PHYSICS, 1974, 3 (01) :9-14

[2] HIGH-SPEED INTEGRATED-CIRCUIT USING SILICON MOLECULAR-BEAM EPITAXY (SI-MBE) [J].

KASPER, E ;

WORNER, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (10) :2481-2486

[3] AN INDUSTRIAL SINGLE-SLICE SI-MBE APPARATUS [J].

KASPER, E ;

KIBBEL, H ;

SCHAFFLER, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) :1154-1158

[4] SYMMETRICALLY STRAINED SI/GE SUPERLATTICES ON SI SUBSTRATES [J].

KASPER, E ;

KIBBEL, H ;

JORKE, H ;

BRUGGER, H ;

FRIESS, E ;

ABSTREITER, G .

PHYSICAL REVIEW B, 1988, 38 (05) :3599-3601

[5] GROWTH AND PROPERTIES OF SI/SIGE SUPERLATTICES [J].

KASPER, E .

SURFACE SCIENCE, 1986, 174 (1-3) :630-639

[6]

KASPER E, 1988, MATER RES SOC S P, V102, P393

[7]

MENDESZ EE, 1987, PHYSICS APPLICATIO B, V170, P101

[8] STRUCTURALLY INDUCED OPTICAL-TRANSITIONS IN GE-SI SUPERLATTICES [J].

PEARSALL, TP ;

BEVK, J ;

FELDMAN, LC ;

BONAR, JM ;

MANNAERTS, JP ;

OURMAZD, A .

PHYSICAL REVIEW LETTERS, 1987, 58 (07) :729-732

[9]

Tung R.T., 1988, SILICON MOL BEAM EPI, V2, P13

[10]

ZACHAI R, 1988, 19TH P ICPS WARSH

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