DIRECT CURRENT-VOLTAGE CHARACTERISTICS OF TRANSISTORS IN AVALANCHE REGION

被引：1

作者：

SPIRITO, P

机构：

[1] Istituto Eletrotecnico, Universita di Napoli, Naples

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1968年 / SC 3卷 / 02期

关键词：

D O I：

10.1109/JSSC.1968.1049869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A graphical method is proposed for plotting the transistor avalanche characteristics, approximating the actual behavior of the base-emitter junction by means of the common base input characteristic. Experimental results for a typical avalanche transistor are reported. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：194 / &