A 20-GHZ FREQUENCY-DIVIDER IMPLEMENTED WITH HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：31

作者：

WANG, KC

ASBECK, PM

CHANG, MF

SULLIVAN, GJ

MILLER, DL

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 09期

关键词：

D O I：

10.1109/EDL.1987.26668

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：383 / 385

页数：3

共 9 条

[1]

Asbeck P. M., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P133

[2] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING A SELF-ALIGNED DUAL-LIFT-OFF PROCESS [J].

CHANG, MCF ;

ASBECK, PM ;

WANG, KC ;

SULLIVAN, GJ ;

SHENG, NH ;

HIGGINS, JA ;

MILLER, DL .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) :303-305

[3] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

FRITZ, IJ ;

PICRAUX, ST ;

DAWSON, LR ;

DRUMMOND, TJ ;

LAIDIG, WD ;

ANDERSON, NG .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :967-969

[4] HIGH-SPEED FREQUENCY-DIVIDERS USING SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

ISHIBASHI, T ;

YAMAUCHI, Y ;

NAKAJIMA, O ;

NAGATA, K ;

ITO, H .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :194-196

[5] GAAS/IN0.08GA0.92AS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A LATTICE-MISMATCHED BASE [J].

ITO, H ;

ISHIBASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (05) :L421-L424

[6]

Jensen J. F., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P476

[7]

SHIRBER JE, 1985, APPL PHYS LETT, V46, P187

[8] ALGAAS INGAAS GAAS STRAINED-LAYER HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY [J].

SULLIVAN, GJ ;

ASBECK, PM ;

CHANG, MF ;

MILLER, DL ;

WANG, KC .

ELECTRONICS LETTERS, 1986, 22 (08) :419-421

[9]

Wang K. C., 1986, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest (Cat. No.86CH2372-1), P159

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