FORMATION OF THICK SEMI-INSULATING GAAS FILMS BY FLASH EVAPORATION

被引：4

作者：

LIGHT, TB

HULL, EM

GERETH, R

机构：

来源：

关键词：

D O I：

10.1149/1.2411448

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：857 / &

共 6 条

[1]

BERKENBLIT M, 1967, OCT CHIC M

[2] INVESTIGATION OF VOLTAGE BREAKDOWN IN SEMI-INSULATING GAAS [J].

HAISTY, RW ;

HOYT, PL .

MAZUR, RG ;

DICKEY, DH .

[4] MISCIBILITY OF 3-V SEMICONDUCTORS STUDIED BY FLASH EVAPORATION [J].

MULLER, EK ;

RICHARDS, JL .

[5]

PAPAZIAN A, 1967, OCT CHIC M

[6] EPITAXY OF COMPOUND SEMICONDUCTORS BY FLASH EVAPORATION [J].

RICHARDS, JL ;

GALLONE, LM ;

HART, PB .