IMPROVED SIMULATION OF P-CHANNEL AND N-CHANNEL MOSFETS USING AN ENHANCED SPICE MOS3 MODEL

被引：10

作者：

WONG, SL ^{[1
]}

SALAMA, CAT ^{[1
]}

机构：

[1] UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A1,ONTARIO,CANADA

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1987年 / 6卷 / 04期

关键词：

D O I：

10.1109/TCAD.1987.1270306

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：586 / 591

页数：6

共 9 条

[1] DRIFT VELOCITY OF ELECTRONS AND HOLES AND ASSOCIATED ANISOTROPIC EFFECTS IN SILICON [J].

CANALI, C ;

OTTAVIANI, G ;

ALBERIGI.A .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) :1707-+

[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].

CAUGHEY, DM ;

THOMAS, RE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+

[3]

CHAN EC, 1983, THESIS U TORONTO

[4] VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON [J].

COEN, RW ;

MULLER, RS .

SOLID-STATE ELECTRONICS, 1980, 23 (01) :35-40

[5] EXTRACTION OF MOSFET PARAMETERS USING THE SIMPLEX DIRECT SEARCH OPTIMIZATION METHOD [J].

CONWAY, P ;

CAHILL, C ;

LANE, WA ;

LIDHOLM, SU .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1985, 4 (04) :694-698

[6] MULTIPLE-BASELINE AND MULTIPLE-PROBE DESIGNS - PRACTICAL ALTERNATIVES FOR SPECIAL-EDUCATION ASSESSMENT AND EVALUATION [J].

MURPHY, RJ ;

BRYAN, AJ .

JOURNAL OF SPECIAL EDUCATION, 1980, 14 (03) :325-335

[7]

VLADIMIRESCU A, 1980, ERLM807 UC BERK MEM

[8]

Ward D. E., 1982, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, VCAD-1, P163, DOI 10.1109/TCAD.1982.1270007

[9]

YANG P, 1983, IEEE T ELECTRON DEV, V30, P1214, DOI 10.1109/T-ED.1983.21277

← 1 →