HOMOGENEOUS AND HETEROGENEOUS THERMAL-DECOMPOSITION RATES OF TRIMETHYLGALLIUM AND ARSINE AND THEIR RELEVANCE TO THE GROWTH OF GAAS BY MOCVD

被引:163
作者
DENBAARS, SP [1 ]
MAA, BY [1 ]
DAPKUS, PD [1 ]
DANNER, AD [1 ]
LEE, HC [1 ]
机构
[1] UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
关键词
D O I
10.1016/0022-0248(86)90300-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:188 / 193
页数:6
相关论文
共 9 条
[1]  
FRIJLINK PM, 1982, JAPAN J APPL PHYS, V21, P1574
[2]   (INAS)1(GAAS)1 LAYERED CRYSTAL GROWN BY MOCVD [J].
FUKUI, T ;
SAITO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L521-L523
[3]   THE MECHANISM OF THE GROWTH OF INP BY MOCVD - AN INVESTIGATION OF THE PYROLYSES OF SOME GROUP-III METAL-ORGANICS [J].
HAIGH, J ;
OBRIEN, S .
JOURNAL OF CRYSTAL GROWTH, 1984, 67 (01) :75-78
[4]   PYROLYSIS OF TRIMETHYL GALLIUM [J].
JACKO, MG ;
PRICE, SJW .
CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1963, 41 (06) :1560-&
[5]   A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY [J].
LEYS, MR ;
VEENVLIET, H .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :145-153
[6]   ON THE REACTION-MECHANISM OF GAAS MOCVD [J].
NISHIZAWA, J ;
KURABAYASHI, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :413-417
[7]   DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE [J].
REEP, DH ;
GHANDHI, SK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) :675-680
[8]   THE DECOMPOSITION OF ARSINE [J].
TAMARU, K .
JOURNAL OF PHYSICAL CHEMISTRY, 1955, 59 (08) :777-780
[9]   MASS-SPECTROMETRIC STUDY OF GA(CH3)3 AND GA(C2H5)3 DECOMPOSITION REACTION IN H-2 AND N-2 [J].
YOSHIDA, M ;
WATANABE, H ;
UESUGI, F .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) :677-679