ATOMIC-RESOLUTION OF THE SILICON (111)-(7X7) SURFACE BY ATOMIC-FORCE MICROSCOPY

被引：924

作者：

GIESSIBL, FJ ^{[1
]}

机构：

[1] PK SCI INSTRUMENTS, 1171 BORREGAS AVE, SUNNYVALE, CA 94089 USA

来源：

SCIENCE | 1995年 / 267卷 / 5194期

关键词：

549.3; Others; including Bismuth; Boron; Cadmium; Cobalt; Mercury; Niobium; Selenium; Silicon; Tellurium and Zirconium - 741.3 Optical Devices and Systems - 801.4 Physical Chemistry - 921.1 Algebra;

D O I：

10.1126/science.267.5194.68

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Achieving high resolution under ultrahigh-vacuum conditions with the force microscope can be difficult for reactive surfaces, where the interaction forces between the tip and the samples can be relatively large. A force detection scheme that makes use of a modified cantilever beam and senses the force gradient through frequency modulation is described. The reconstructed silicon (111)-(7x7) surface was imaged in a noncontact mode by force microscopy with atomic resolution (6 angstroms lateral, 0.1 angstrom vertical).

引用

页码：68 / 71

页数：4

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