DEEP LEVEL IMPURITIES IN GERMANIUM

被引：84

作者：

TYLER, WW

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(59)90274-4

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：59 / 65

页数：7

共 61 条

[1]

ARMSTRONG JA, 1957, B AM PHYS SOC 2, V2, P265

[2] CARRIER CAPTURE PROBABILITIES IN NICKEL DOPED GERMANIUM [J].

BATTEY, JF ;

BAUM, RM .

PHYSICAL REVIEW, 1955, 100 (06) :1634-1637

BATTEY, JF ;

BAUM, RM .

PHYSICAL REVIEW, 1954, 94 (05) :1393-1393

[4] RECOMBINATION IN SEMICONDUCTORS [J].

BEMSKI, G .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :990-1004

[5]

Brooks H., 1955, ADV ELECT ELECT PHYS, V7, P85

[6]

BUGAY AA, 1957, ZH TEKH FIZ MOSCOW, V27, P1671

[7]

BUGAY AA, 1957, ZH TEKH FIZ MOSCOW, V27, P210

[8]

BURSTEIN E, 1955, ADV ELECTRONICS ELEC, V7, P1

[9]

BURTON, 1953, J PHYS CHEM-US, V57, P853

[10] IMPURITY CENTERS IN GE AND SI [J].

BURTON, JA .

PHYSICA, 1954, 20 (10) :845-854