DC AND RF PERFORMANCE OF GAAS-MESFET FABRICATED ON SILICON SUBSTRATE USING EPITAXIAL LIFT-OFF TECHNIQUE

被引：14

作者：

SHAH, DM ^{[1
]}

CHAN, WK ^{[1
]}

GMITTER, TJ ^{[1
]}

FLOREZ, LT ^{[1
]}

SCHUMACHER, H ^{[1
]}

VANDERGAAG, BP ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 22期

关键词：

Galliumarsenide; Semiconductor devices and materials; Silicon;

D O I：

10.1049/el:19901199

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs MESFETs have been fabricated on a silicon substrate using a molecular beam epitaxy grown film detached from its growth substrate and attached on a silicon substrate covered with a dielectric. The device processing is done on the silicon substrate. The MESFETs exhibit IDSS= 130mA/mm, gm=135mS/mm and for 1.3μm gate length unity current gain cut-off frequency fTof 12 GHz. Excellent device isolation with subpicoampere leakage currents is obtained. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1865 / 1866

页数：2

共 8 条

[1]

CHAN WK, 1990, 12 SOTAPOCS EL SOC P

[2] DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100) [J].