NEGATIVE RESISTANCE, CONDUCTIVE SWITCHING, AND MEMORY EFFECT IN SILICON-DOPED YTTRIUM-IRON GARNET CRYSTALS

被引：35
作者：
BULLOCK, DC
EPSTEIN, DJ
机构：
来源：
APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 05期
关键词：
D O I：
10.1063/1.1653364
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：199 / &
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